| PART |
Description |
Maker |
| RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
|
| CE2766 |
6-Channe Audio DAC
|
CEI
|
| IRF450 IRF451 IRF452 IRF252 IRF250 IRF251 |
N-CHANNE POWER MOSFETS
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| FCB20N60F12 |
600V N-Channe MOSFET 600V, 20A, 190mΩ
|
Fairchild Semiconductor
|
| IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 60 V, 0.023 ohm, N-CHANNE
81 A, 60 V, 0.012 ohm, N-CHANNE
27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
VISHAY INTERTECHNOLOGY INC
|
| HUF76407D3 HUF76407D3S HUF76407D3ST |
11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
11A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET
|
Fairchild Semiconductor
|
| NIMD6302R2 |
HDPlus Dual N-Channel Self-Protected Field Effect Transistor with 1:200 Current Sense FET
HDPlus Dual N-Channe Self-protected Field Effect Transistors with 1:200 Current Mirror FET
|
ONSEMI[ON Semiconductor]
|
| IRFIZ34N-004 IRFIZ46N-002 IRFIZ46N-029 IRFIZ46N-02 |
19 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
31 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
13 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
28 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
2.1 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
21 A, 60 V, 0.042 ohm, N-CHANNE
28 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
4.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
JST Mfg. Co., Ltd.
Vishay Intertechnology, Inc.
Austin Semiconductor, Inc
|
| AT90SC25672R AT90SC25672RT AT90SC320856 AT90SC3208 |
Low-power, High performance 8-bit/16-bit secure microcontroller with 256K Byte ROM, 72K Byte EEPROM. Security Features: MMU, MED, OTP (one time programmable) EEPROM area, RN (Random Number Generator), "out of bounds" detectors, side channe
Low-power, high-performance, 8-bit/16-bit secure microcontroller with 32K Byte ROM, 8K Byte FLASH and 56K Byte EEPROM.
Low-power, high-performance, 8-/16-bit secure microcontroller with 32K Byte FLASH and 32K Byte EEPROM.
Low-power, High performance 8-bit/16-bit secure microcontroller with 48K Byte ROM, 2K Byte EEPROM. Security Features: OTP (one time programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side channel attack co
Low-power, high-performance, 8-/16-bit secure microcontroller with 48K Byte ROM and 16K Byte EEPROM.
Low-power, High Performance 8-bit/16-bit secure microcontroller with 64K Byte ROM, 4K Byte EEPROM. Security Features: OTP (one time programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side channel attack co
Low-power, High performance 8-bit/16-bit secure microcontroller with 96K Byte ROM, 8K Byte EEPROM. Security Features: OTP (one time programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side channel attack co
Low-power, high-performance, 8-/16-bit secure microcontroller with 64K Byte ROM and 64K Byte EEPROM.
Low-power, high-performance, 8-/16-bit secure microcontroller with 64K Byte ROM and 32K Byte EEPROM.
Low-power, high-performance, 8-/16-bit secure microcontroller with 96K Byte ROM and 16K Byte EEPROM.
|
Atmel
|
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